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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3231 DESCRIPTION *With TO-220 package *Wide area of safe operation APPLICATIONS *Switching regulators *General purpose power amplifiers *TV horizontal output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 200 150 7 4 40 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC3231 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 150 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 200 V Emitter-base breakdown voltage 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V A A ICBO Collector cut-off current VCB=200V;IE=0 100 IEBO Emitter cut-off current VEB=7V; IC=0 100 hFE DC current gain IC=1A ; VCE=5V 30 150 fT Transition frequency IC=0.5A ; VCE=5V 8 MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3231 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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